Transistor
Plastic inclosure material, 0.110 inches minimum and 0.120 inches maximum overall length, 0.035 inches minimum and 0.041 inches maximum overall height, terminal mounting method, silicon semiconductor material, 30.0 minimum breakdown voltage, gate-to-source, with all other terminals short-circuited to source voltage rating in volts per characteristic
DAC | HCC | DMIL | RNCC |
---|---|---|---|
5 | - | - | 3 |
RNVC | SADC | MSDS | RNAAC |
---|---|---|---|
2 | - | - | ZZ |
An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes:semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
INC | FIIG | Concept | Condition |
---|---|---|---|
20588 | A110A0 | - | 1 |
Details
The element,compound,or mixture of which the inclosure is fabricated,excluding any surface treatment. please use mrc cqsj in place of this discontinued mrc.Details
The dimension measured along the longitudinal axis with terminated points at the extreme ends of the item.Details
The distance measured in a straight line from the bottom to the top of an item.Details
The means of attaching the item.Details
The chemical compound or mechanical mixture properties of which the semiconductor is fabricated.Details
The value of the voltage that may be applied,expressed in volts,and the symbol used to identify the specific electrical characteristic.Part | CAGE | DAC | HCC | RNCC | RNVC | MSDS | RNAAC |
---|---|---|---|---|---|---|---|
381482-1 | 37695 | A | - | 7 | 2 | - | ZZ |
SMP5114 | 66182 | 5 | - | 3 | 2 | - | ZZ |
HMIC | PMIC | ESD/EMI | Criticality |
---|---|---|---|
N | A | A | - |
UFC | HMC | LTL | LCL |
---|---|---|---|
34525 | - | W | - |
RVC | WCC | TCC | SHC |
---|---|---|---|
- | 72D | Z | 9 |
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What is the NIIN of the NSN 5961-01-454-7298?
When the NSN 5961-01-454-7298 was assigned to the Federal Catalog?
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